A61L-0001-0187#A意法半導(dǎo)體(STMicroelectronics,簡(jiǎn)稱ST)的槽柵結(jié)構(gòu)低壓MOSFETs STripFET F7系列將新增60V的產(chǎn)品線,可協(xié)助電信、服務(wù)器和臺(tái)式PC機(jī)的電源以及工業(yè)電源和太陽(yáng)能微逆變器的直流-直流(DC/DC)電源轉(zhuǎn)換器達(dá)到嚴(yán)格的能效標(biāo)準(zhǔn)要求,最大限度提升電源功率密度。
ST新聞稿9月16日-圖片——意.jpg
STripFET F7 MOSFET不僅大幅提高了晶體管的導(dǎo)通能效和開關(guān)性能,A61L-0001-0187#A還簡(jiǎn)化了通道間的槽柵結(jié)構(gòu)(trench-gate structure),實(shí)現(xiàn)極低的導(dǎo)通電阻、電容和柵電荷量,并取得優(yōu)異的品質(zhì)因數(shù)(RDS(ON) x Qg)。此外,本征體二極管的恢復(fù)電荷(recovery charge)很低,有助于提高開關(guān)性能。高雪崩耐量確保在惡劣條件下保持性能穩(wěn)健,反向傳輸電容對(duì)輸入電容(Crss/Ciss)的比值低,有助于強(qiáng)化抗電磁干擾(EMI immunity)。
A61L-0001-0187#A意法半導(dǎo)體的60V STripFET F7 MOSFET是為同步整流(synchronous rectification)電路定制,能夠以更少的并聯(lián)器件達(dá)到最大目標(biāo)電流,以此提高功率密度、降低元器件使用數(shù)量。該系列共有12款產(chǎn)品,覆蓋了所有工業(yè)標(biāo)準(zhǔn)電源,最大輸出電流從90A到260A(在Tc=25°C下,硅限制連續(xù)漏極電流)。新產(chǎn)品提供多個(gè)封裝選擇,包括PowerFLAT? 5x6、PowerFLAT 3.3x3.3、DPAK、D2PAK、TO-220、TO-220FP、雙引腳或六引腳H2PAK。
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